Chemical processing of silicon semiconductor materials and their physical fundamentals

Abstract

Silicon remains the dominant semiconductor material in modern microelectronics due to its well-established processing technology and favorable physical properties. This paper investigates the chemical processing techniques applied to silicon and analyzes their fundamental physical mechanisms. Particular attention is given to wet and dry chemical etching, thermal oxidation, and doping processes, which play a critical role in surface morphology control and electrical property optimization. The influence of oxide layer thickness, surface states, and defect-induced recombination centers on carrier transport characteristics is discussed. The analysis demonstrates that precise control of chemical processing parameters significantly enhances device reliability and performance in MOS structures, integrated circuits, and photovoltaic applications.